A supersolid is a phase of matter that combines two apparently opposite characteristics: the rigidity of a crystal and the ...

The recent experiment diverged from previous methods by utilizing a semiconductor known as aluminum gallium arsenide instead of ultracold atoms. The researchers directed a laser at a specifically ...

Greece is one of the 13 EU members states that will proceed with projects aiming to bolster Europe's raw material ...

The researchers built the device with an electron-blocking layer made of aluminium gallium arsenide phosphide (AlGaAsP), instead of more commonly used gallium indium phosphide (GaInP), that was ...

generates single photos by a single quantum dot inside the photonic waveguides (red), which are fabricated on top of crystalline gallium arsenide- (GaAs-) aluminium gallium arsenide (Al0.2Ga0.8As ...

The reflector was optically optimized through a combination of ceramic and silver and the cell's absorber was based on nitrogen-doped gallium arsenide and p-type aluminum gallium arsenide.

Today heterostructures composed of silicon and silicon germanium, or gallium arsenide and aluminium gallium arsenide, are used in low-noise high-frequency amplifiers in cell phones and satellite ...

These advanced materials, including gallium arsenide (GaAs), gallium nitride (GaN), and indium phosphide (InP), offer superior performance compared to traditional semiconductors, enabling high ...

Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making integrated-circuit chips. However, the vast majority of ...

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.